Part Number: 25N120, IXGH25N120
Function: 1200V, 50A, IGBT
Package: TO-247 AD
Manufacturer: IXYS Corporation
Images:
Description
The 25N120 is High Speed IGBT. High-Speed IGBT (Insulated Gate Bipolar Transistor) refers to a type of power semiconductor device that combines the features of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) and a bipolar junction transistor (BJT). IGBTs are widely used in various power electronic applications, such as motor drives, inverters, and switching power supplies.
High-Speed IGBTs are specifically designed to handle high-frequency switching applications, where fast switching speeds and low switching losses are required. These devices are optimized for high-frequency operation and typically have a smaller size, reduced parasitic capacitances, and improved voltage and current ratings compared to standard IGBTs.
Features:
1. International standard package JEDEC TO-247 AD
2. 2nd generation HDMOSTM process
3. Low VCE(sat)
– for low on-state conduction losses
4. MOS Gate turn-on
– drive simplicity
Applications:
1. AC motor speed control
2. DC servo and robot drives
3. DC choppers
4. Uninterruptible power supplies (UPS)
5. Switch-mode and resonant-mode power supplies
6. Capacitor discharge systems
7. Solid state relays
Advantages:
1. Easy to mount with 1 screw (TO-247) (isolated mounting screw hole)
2. High power density
[…]
High-speed IGBTs are commonly used in industrial automation, renewable energy systems, electric vehicles, and other high-power applications where fast switching and high-frequency operation are necessary.
25N120 PDF Datasheet
