Part Number: D669A, 2SD669A
Function: 160, 1.5A, Silicon NPN Epitaxial Transistor
Package: TO-126MOD Type
Manufacturer: Hitachi Semiconductor
Images:
1 page
Description
D669A transistor is a type of bipolar junction transistor (BJT) that consists of two n-type semiconductor materials separated by a single p-type material.
:
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to base voltage : VCBO = 180 V
2. Collector to emitter voltage : VCEO = 160 V
3. Emitter to base voltage : VEBO = 5 V
4. Collector current : IC = 1.5 A
5. Collector peak current : IC(peak) = 3 A
6. Collector power dissipation : PC = 1 W
7. Junction temperature : Tj = 150 °C
8. Storage temperature: Tstg = -55 to +150 °C
Application
1. Low frequency power amplifier complementary pair with 2SB649 / 2SB649A
D669A PDF Datasheet
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