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Description

B1151 is PNP Silicon Power Transistor. The 2SB1151 is a Low Vce(sat) transistor which has a large current capability and wide SOA. It is suitable for DC-DC converter, or driver of solenoid or motor.

The operation of a PNP transistor is based on the biasing of its three layers: the emitter, base, and collector. The emitter is connected to the positive power supply, the base is the control terminal, and the collector is connected to the load or circuit.

When a small current flows into the base terminal, it controls a larger current flowing between the emitter and collector. The transistor amplifies the input signal and can be used to switch larger currents on and off in various electronic circuits.

Silicon PNP transistors offer advantages such as high gain, low noise, and good thermal stability. They are widely used in many applications, including audio amplifiers, power supplies, voltage regulators, and digital logic circuits.

Features

1. Low Collector Saturation Voltage.

2. Large Current

3. High Total power dissipation : Pt = 1.3 W

4. Complementary to 2SD1691

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 60 V

2. Collector to Emitter Voltage: Vceo = – 60 V

3. Emitter to Base Voltage: Vebo = – 7 V

4. Collector Current: Ic = – 5 A

5. Collector Dissipation : Pc = 1.3 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

This is NPN Transistor with 600mA, 40V, SOT-23 Type.

Part Number: MMBT2222A, Marking Code : 7C*

Function: NPN Switching Transistor

Package: SOT-23 Type

Manufacturer: Philips Electronics ( https://www.nxp.com/ )

Philips Electronics spun off its division into a separate company called NXP Semiconductors in 2006, making it an independent, publicly traded company.

Image and Pinouts:

MMBT2222A datasheet

What is MMBT2222A?

This is a surface mount version of the popular 2N2222A bipolar junction transistor (BJT). Like the 2N2222A, the MMBT2222A is an NPN type transistor that is commonly used in electronic circuits for amplification, switching, and other applications.

This is NPN switching transistor in a SOT23 plastic package. PNP complement: PMBT2907A.

Features

1. High current (max. 600 mA)
2. Low voltage (max. 40 V).
3. Good gain characteristics
4. Fast switching speeds
5. Reliable performance

Advantages vs Disadvantages

Advantages:

1. Small size and surface mount package make it suitable for compact electronic designs where space is limited

2. Good gain characteristics and fast switching speeds make it suitable for a wide range of electronic applications

Disadvantages:

1. Limited voltage and current ratings compared to other transistors, which makes it unsuitable for high-power applications

2. May require additional components such as resistors and capacitors to achieve desired performance

Absolute Maximum Ratings

1. collector-base voltage open emitter : VCBO = 75 V
2. collector-emitter voltage open base :VCEO = 40 V
3. emitter-base voltage open collector : VEBO = 6 V
4. collector current (DC) : IC = 600 mA
5. peak collector current : ICM = 800 mA
6. peak base current :IBM = 200 mA
7. total power dissipation : Ptot = 250 mW

Applications

1. Switching and linear amplification.

FAQs:

Q: What is the difference with 2N2222A?

A: The MMBT2222A is a surface mount version of the 2N2222A, with a slightly lower voltage and current rating. They have similar features and characteristics but differ in their packaging.

Q: What is the maximum frequency at which this transistor can operate?

A: The MMBT2222A has a maximum frequency rating of 300 MHz, which is the same as the 2N2222A.

Other data sheets are available within the file: MMBT2222

Transistor

B1151 Transistor – PNP, Pinout, 2SB1151 Datasheet PDF

Description

Features

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MMBT2222A Datasheet – NPN Switching Transistor – Philips

What is MMBT2222A?

Advantages vs Disadvantages

MMBT2222A Datasheet PDF Download