Transistor

7N60B Datasheet – 600V, 7A, N-Ch, MOSFET (Transistor)

Posted on by pinout

What is 7N60B?

This is a type of MOSFET (metal-oxide-semiconductor field-effect transistor) that is designed for use in high-power switching applications. It has a maximum drain-source voltage rating of 600 volts and a continuous drain current rating of 7 amperes. The MOSFET has a low on-resistance and fast switching speed, making it suitable for use in power supply, motor control, and lighting applications.

Part Number: SSP7N60B

Function: 600V, N-Channel MOSFET (Transistor)

Package: TO-220 Type

Manufacturer: Chongqing Pingwei , Fairchild

Images:

7N60B datasheet transistor

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies

 

7N60B Pinout

7N60B mosfet pinout

Features

1. 7.0A, 600V, RDS(on) = 1.2Ω @VGS = 10 V
2. Low gate charge ( typical 38 nC)
3. Low Crss ( typical 23 pF)
4. Fast switching
5. 100% avalanche tested
6. Improved dv/dt capability
7. TO-220F package isolation = 4.0kV

Advantages

1. Low on-resistance:
The MOSFET has a low on-resistance, which means it can handle high currents with low power dissipation and achieve low voltage drops across the device.

2. Fast switching speed:
It has a fast switching speed, which makes it suitable for use in high-frequency switching applications.

[…]

Other data sheets are available within the file: SSP7N60B

7N60B Datasheet


 

Similar features and reference parts

MJE13003 Datasheet PDF – 400V, 1.5A, NPN Transistor – UTC

Posted on by pinout

What is MJE13003?

This is an NPN bipolar junction transistor designed for high-voltage, high-speed power switching applications. It has a maximum collector-emitter voltage rating of 400V and a maximum collector current rating of 1.5A.

Part Number: MJE13003

Function: 400V, 1.5A, Power Transistor

Package: TO-220, TO-251, TO-126, TO-252

Manufacturer: Unisonic Technologies

Image and Pinouts:

MJE13003 datasheet pdf

 

Description

This is 400V, 1.5A, NPN Silicon Power Transistor. These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode.

Features

1. Reverse biased SOA with inductive load @ TC=100°C

2. Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tC = 290ns @ 1A, 100°C.

3. 700V blocking capability

Advantages Vs Disadvantages

Advantages:

It is high voltage and current ratings, which make it suitable for use in high-power applications. It also has a fast switching speed, which allows for efficient power conversion.

Disadvantages:

This is its relatively low collector current rating compared to other power transistors on the market. This may limit its use in some high-power applications.

Additionally, it may require additional circuitry, such as a flyback diode, to protect against voltage spikes during switching.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 700 V

2. Collector to Emitter Voltage: Vceo = 400 V

3. Emitter to Base Voltage: Vebo = 9 V

4. Collector Current: Ic = 1.5 A

5. Collector Dissipation : Pc = 1.4 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Applications:

1. Switching regulator’s, inverters

2. Motor controls

3. Solenoid/relay drivers

4. Deflection circuits

Other data sheets are available within the file: 13003BR, 13003G, 13003L, MJE13003-TO-126

MJE13003 Datasheet PDF

MJE13003 pdf


 

Related articles across the web