Part Number: 2SK3918

Function: 48A, 25V, N-CHANNEL POWER MOSFET

Package: TO-251 Type

Manufacturer: NEC ( Renesas Technology )

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Description

The 2SK3918 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

Features

1. Low on-state resistance : RDS(on)1= 7.5 mΩ MAX. (VGS= 10 V, ID= 24 A)

2. Low Ciss : Ciss= 1300 pF TYP.

3. 5 V drive available

Absolute maximum ratings ( Ta = 25°C )

1. Drain to Source Voltage (VGS = 0 V) : VDSS = 25 V
2. Gate to Source Voltage (VDS = 0 V) : VGSS = ±20 V
3. Drain Current (DC) (TC = 25°C) : ID(DC) = ±48 A
4. Drain Current (pulse) : ID(pulse) = ±192 A
5. Total Power Dissipation (TC = 25°C) : PT1 = 29 W
6. Total Power Dissipation :  PT2 = 1.0 W
7. Channel Temperature : Tch = 150 °C
8. Storage Temperature : Tstg = -55 to +150 °C
9. Single Avalanche Current : IAS = 22 A
10. Single Avalanche Energy : EAS = 48 mJ

Other data sheets are available within the file: 2SK3918-ZK, K3918, K3918-ZK

2SK3918 Datasheet PDF Download

Part Number: BSS138W, Marking : 138

Function: 50V, 0.21A, N-Channel MOSFET

Package: SOT-323 Type

Manufacturer: ON Semiconducotor, Fairchild Semiconductor

Image and Pinouts:

 

General

Description

This is 50V, 210mA, N-Channel Logic Level Enhancement Mode Field Effect Transistor.

These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

 

Features

1. Rds(on)= 3.5Ω @ Vgs= 10V, Id= 0.22A

2. Rds(on)= 6.0Ω @ Vgs= 4.5V, Id= 0.22A

3. High density cell design for extremely low Rds(on)

4. Rugged and Reliable

5. Compact industry standard SOT-323 surface mount package

 

Absolute maximum ratings ( Ta=25°C )

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 50 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 0.21 A

4. Channel temperature: Tch = 150 °C

5. Storage temperature: Tstg = -55 to +150 °C

Application:

This product is general usage and suitable for many different applications.

BSS138W Datasheet PDF Download

Other data sheets are available within the file: BSS138