IRF640 Datasheet – 200V, Mesh Overlay MOSFET (Transistor)

This is one of the types of MOSFETs and is a kind of transistor.

The IRF640 is  N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

Part Number: IRF640, IRF640FP

Function: N-CHANNEL, 200V – 0.15 ohm – 18A  MESH OVERLAY MOSFET

Package: TO-220, TO-220FP Type

Manufacturer: STMicroelectronics

Image

irf640-mosfet

Description

This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources.

 

Pinout

irf640-datasheet-pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 16 A
4. Drain power dissipation : PD = 136 W
8. Channel temperature: Tch = -55 to +175 °C
9. Storage temperature: Tstg = -55 to +175 °C

Features

1. Extremely high dv/dt capability
2. Very low intrinsic capacitances
3. Gate charge minimized
4. Single Pulse Avalanche Energy Rated
5. SOA is Power Dissipation Limited
6. Nanosecond Switching Speed
7. Linear Transfer Characteristics
8. High Input Impedance

 

Applications

1. Switching application

 

IRF640 Datasheet

IRF640 pdf


 

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2N3906 Datasheet PDF – 40V, 200mA, PNP Transistor – ST

Part Number: 2N3906

Function: -40V, -200mA, SMALL SIGNAL PNP TRANSISTOR

Package: TO-92 Type

Manufacturer: STMicroelectronics

Image and Pinouts:

2N3906 pinout image

 

Description

This is – 40V, -200mA, PNP Transistor.

In a PNP transistor, the current flows from the collector to the emitter. To turn on the transistor, a small current is applied to the base, which allows a larger current to flow from the emitter to the collector. The base region of a PNP transistor is doped with a material that has more electrons than the emitter or collector regions.

The 2N3906 is a PNP transistor used in circuits that require a negative voltage bias, while the 2N3904 is an NPN transistor used in circuits that require a positive voltage bias. Both transistors are commonly used in low-power switching and amplification applications, but the choice between them depends on the polarity requirements of the circuit.

Features

1. SILICON EPITAXIAL PLANAR NPN TRANSISTOR
2. TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY
3. THE NPN COMPLEMENTARY TYPE IS 2N3904

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 60 V

2. Collector to Emitter Voltage: Vceo = – 40 V

3. Emitter to Base Voltage: Vebo = – 6 V

4. Collector Current: Ic = – 200 mA

5. Total Dissipation : Ptot = 625

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -65 ~ +150°C

Applications:

1. WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT
2. SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE

2N3906 Datasheet ST

2N3906 Datasheet PDF Download

2N3906 pdf


 

Datasheet Download : https://www.sparkfun.com/datasheets/Components/2N3906.pdf

Other data sheets are available within the file: N3906

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