Transistor

1MBH25-120 Datasheet PDF – 1200V, 25A, IGBT, Transistor

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Part Number: 1MBH25-120, 1MBH25D-120

Function: 1200V, 25A, IGBT

Package: TO-3PL Type, Molded Package

Manufacturer: Fuji Electric

Image:

1MBH25-120 datasheet

 

Description

This is 1200V, 25A, IGBT. The IGBT is insulated-gate bipolar transistor.

IMBH25-120  => 1MBH25-120

 

Features

1. Small molded package

2. Low power loss

3. Soft switching with low switching surge and noise

4. High reliability, high ruggedness (RBSOA, SCSOA etc.)

5. Comprehensive line-up

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 1200 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 25 A (Ta = 100°C)

4. Max. Power Dissipation : Pc = 310 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -40 to +150 °C

 

components

 

Applications:

1. Inverter for Motor drive

2. AC and DC Servo drive amplifier

3. Uninterruptible power supply

 

Other data sheets are available within the file:

1MBH25D-120, IMBH25-120, IMBH25D-120

 

1MBH25-120 Datasheet PDF Download


1MBH25-120 pdf

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IRG4PC50F-E Datasheet – 600V, 70A, IGBT, Transistor

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Part Number: IRG4PC50F-E

Function: 600V, 70A, Fast Speed IGBT

Package: TO-247AD Type

Manufacturer: International Rectifier

Image and Pinouts:

IRG4PC50F-E datasheet

 

Description

The IRG4PC50F-E is 600V, 70A, IGBT. The IGBT is insulated-gate bipolar transistor.

Features

1. Optimized for medium operating frequencies (1-5 KHz hin hard switching, >20 Khz in resonat mode).

2. Industry standard TO-247AD package

Benefits :

1. Generation 4 IGBT’s offer highest efficiency available

2. IGBT’s optimized for specified application conditions

3. Designed to be a “drop-in” replacement for equivalent industry-standard Generation 3 IR IGBT’s

 

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 70 A (Tc = 25°C)

4. Maximum Power Dissipation : Pc = 200 W (Tc = 25°C)

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Other data sheets are available within the file: IRG4PC50, IRG4PC50FE, IRG4PC50F-EPBF

 

IRG4PC50F-E Datasheet PDF Download


IRG4PC50F-E pdf

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