Transistor

IRF7413 Datasheet PDF – 30V, MOSFET, SO-8, Transistor

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Part Number: IRF7413

Function: HEXFET power MOSFET

Package: SO-8 Pin Type

Manufacturer: International Rectifier

Image and Pinouts:

IRF7413 datasheet

 

Description

This is 30V, HEXFET power MOSFET.

This N-channel MOSFET is produced using International Rectifier’s advanced HEXFET
power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications

Features

1. Advanced Power MOSFET Technology

2. Ultra Low On-Resistance

3. N-Channel Mosfet

4. Surface Mount

5. Available in Tape & Reel

6. Dynamic dv/dt Rating

7. Fast Switching

Other data sheets are available within the file: IRF-7413

IRF7413 Datasheet PDF Download


IRF7413 pdf

 

K3566 Datasheet PDF – 900V, 2.5A, N-Channel, MOSFET

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K3566, 2SK3566

Function: 900V, 2.5A, N-Channel MOSFET

Pacakge : TO-220 Type

Manufacturer: Toshiba

Image
K3566 mosfet

Description

The K3566 is Silicon N Channel MOS Type Field Effect Transistor.

Features

1. Low drain-source ON resistance: RDS (ON)= 5.6Ω(typ.)

2.  High forward transfer admittance: |Yfs| = 2.0 S (typ.)

3.  Low leakage current: IDSS= 100 μA (VDS= 720 V)

4.  Enhancement-mode: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

 

Pinout

K3566 datasheet pinout

Maximum Ratings (Ta =25°C)

0. Drain current : Id = 2.5 A

1. Drain-source voltage : VDSS = 900 V

2. Drain-gate voltage (RGS =20 kΩ): VDGR = 900 V

3. Gate-source voltage :  VGSS =  ±30 V

4. Drain power dissipation (Tc =25°C)  : PD = 40 W

5. Single pulse avalanche energy : EAS = 216 mJ

6. Avalanche current : IAR = 2.5 A

7. Repetitive avalanche energy : EAR = 4 mJ

Applications:

1. Switching Regulator

K3566 Datasheet PDF


 

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