3DD13009 PDF Datasheet – Vceo=400V, 12A, NPN Transistor

Posted on August 20, 2023November 5, 2024 by pinout

The Part Number is 3DD13009.

The function of this semiconductor is 400V, NPN Transistor.

The package is TO-220, TO-3PN Type

Manufacturer: LGE

Preview images :

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3DD13009 pdf datasheet

Description

3DD13009 is 400V, 12A, Silicon NPN Power Transistor.

Features

1. Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.)

2. Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A

3. Switching Time : tf= 0.7μs(Max.)@ IC= 8.0A

4. 100% tested

5. Minimum Lot-to-Lot variations for robust device performance and reliable operation […]

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3DD13009 transistor equivalent

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 700 V

2. Collector to Emitter Voltage: Vceo = 400 V

3. Emitter to Base Voltage: Vebo = 9 V

4. Collector Current: Ic = 12 A

5. Collector Power Dissipation : Pc = 130 W ( Tc=25°C )

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Applications

1. Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220V switch mode applications such as switching regulators, inverters, Motor controls, Solenoid/Relay drivers and deflection circuit.

3DD13009 PDF Datasheet

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IRFP460 PDF Datasheet – 500V, Power MOSFET (TO-3P)

Posted on August 19, 2023October 20, 2023 by pinout

This post explains for the MOSFET.

The Part Number is IRFP460.

The function of this semiconductor is Power MOSFET.

The package is TO-3P.

Manufacturer: Fairchild Semiconductor

Preview images :

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mosfet IRFP460 pdf datasheet

Description

IRFP460 is 500V, 22A, Power MOSFET(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Features

1. Avalanche Rugged Technology

2. Rugged Gate Oxide Technology

3. Lower Input Capacitance

4. Improved Gate Charge

5. Extended Safe Operating Area

6. Lower Leakage Current: 10µA (Max.) @ VDS = 500V

7. Lower RDS(ON): 0.197Ω (Typ.)

IRFP460 transistor pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 22 A (Tc = 25°C)

4. Total Power Dissipation: Pd = 278 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

IRFP460 PDF Datasheet

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