W60N10 Datasheet PDF – 100V, 60A, N-Ch, MOSFET – ST

Part Number: W60N10

Function: 60A, 100V, N-CHANNEL MOSFET

Package: TO-247, TO-218, ISOWATT218 Type

Manufacturer: STMicroelectronics

Image and Pinouts:

W60N10 datasheet

 

Description

This is 60A, 100V, N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR.

 

Features

1. TYPICAL RDS(on)= 0.02 Ω

2. AVALANCHE RUGGED TECHNOLOGY

3. 100% AVALANCHE TESTED

4. REPETITIVE AVALANCHE DATA AT 100’C

5. LOW GATE CHARGE

6. VERY HIGH CURRENT CAPABILITY

7. 175°C OPERATING TEMPERATURE

8. APPLICATION ORIENTED CHARACTERIZATION

 

Absoulte maximum ratings

1. Drain-source Voltage (VGS = 0) : VDS = 100 V

2. Drain- gate Voltage (RGS = 20 kW): VDGR = 100 V

3. Gate-source Voltage : VGS = ± 20 V

4. Drain Current (continuous) at Tc = 25 °C : ID  = 60 A

5. Drain Current (continuous) at Tc = 100 °C : ID 42 A

6. Drain Current (pulsed) : IDM = 240 A

7. Total Dissipation at Tc = 25 °C : Ptot = 200 W

 

 

Applications:

1. HIGH CURRENT, HIGH SPEED SWITCHING

2. SOLENOID AND RELAY DRIVERS

3. REGULATORS

4. DC-DC & DC-AC CONVERTERS

5. MOTOR CONTROL, AUDIO AMPLIFIERS

6. AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)

 

 

Other data sheets are available within the file: H60N10, STH60N10, STH60N10FI, STW60N10

W60N10 Datasheet PDF Download


W60N10 pdf