BUH515D Datasheet – 8A, 700V, NPN Power Transistor

Part Number: BUH515D

Function: 700V, 8A, NPN Power Transistor

Package: ISOWATT218 Type

Manufacturer: STMicroelectronics

Image and Pinouts:

BUH515D datasheet

 

Description

The BUH515D is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors.

 

Features

1. STMicroelectronics PREFERRED SALESTYPE

2. HIGH VOLTAGE CAPABILITY

3. FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTING

4. NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE

ABSOLUTE MAXIMUM RATINGS

1. Collector-Base Voltage (IE = 0) : VCBO = 1500 V

2. Collector-Emit ter Voltage (IB = 0) : VCEO = 700 V

3. Emitter-Base Voltage (IC = 0) : VEBO = 5 V

4. Collector Current : IC = 8 A

5. Collector Peak Current (tp < 5 ms) : ICM = 15 A

6. Base Current : IB = 5 A

7. Base Peak Current (tp < 5 ms) : IBM = 8 A

8. Total Dissipation at Tc = 25 ‘C : Ptot = 50 W

 

Applications:

1. HORIZONTAL DEFLECTION FOR COLOUR TV

Other data sheets are available within the file: BUH515

BUH515D Datasheet PDF


BUH515D pdf

2SK3411 Datasheet PDF – 60V, 9A, N-Ch, MOSFET – Sanyo

Part Number: 2SK3411

Function: 9A, 60V, N-Channel MOSFET

Package: TP, TP-FA Type

Manufacturer: SANYO (Panasonic)

Image and Pinouts:

2SK3411 datasheet

 

Description

The 2SK3411 is 60V, 9A, N-Channel Silicon MOSFET.

Features

1. Low ON-resistance.
2. Ultrahigh-speed switching.
3. 4V drive.

Absolute Maximum Ratings at Ta=25°C

1. Drain-to-Source Voltage : VDSS = 60 V
2. Gate-to-Source Voltage : VGSS = ±20 V
3. Drain Current (DC) : ID = 9 A
4. Drain Current (Pulse) : IDP = 36 A
5. Allowable Power Dissipation : PD = 1 W

Applications:

1. DC / DC Converter

Other data sheets are available within the file: K3411

2SK3411 Datasheet PDF Download


2SK3411 pdf

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