IRF540 Datasheet PDF – Vdss = 100V, 33A, Power MOSFET

Part Number: IRF540

Function: 100V, 33A, HEXFET POWER MOSFET

Package: TO-220AB Type

Manufacturer: International Rectifier

Image

IRF540 image

Features

  1. Advanced Process Technology
  2. Ultra Low On-Resistance
  3. Dynamic dv/dt Rating
  4. 175°C Operating Temperature
  5. Fast Switching
  6. Fully Avalanche Rated

IRF540 datasheet

Description

Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

IRF540 Datasheet

IRF540 pdf


 

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K2161 Datasheet PDF – 200V, 9A, MOSFET, Transistor

Part Number: K2161

Function: 200V, 9A, N-Ch, MOSFET

Package: TO-220ML Type

Manufacturer: SANYO (Panasonic)

Image and Pinouts:

K2161 datasheet

 

Description

This is 200V, 9A, N-Channel Silicon MOSFET.

Features

1. Low ON resistance.

2. Ultrahigh-speed switching.

3. Low-voltage drive.

4. Micaless package facilitating mounting.

Test circuits :

components

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 200 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 9 A

4. Allowable Power Dissipation: Pd = 2 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Ultrahigh-Speed Switching

 

Other data sheets are available within the file: 2SK2161

K2161 Datasheet PDF Download


K2161 pdf