Transistor

2SK3061 PDF Datasheet – 60V, 70A, MOSFET, Transistor – Renesas

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Part Number: 2SK3061

Function: 60V, 70A, N-CHANNEL POWER MOSFET

Package: Isolated TO-220 Type

Manufacturer: Renesas Electronics

Image and Pinouts:

2SK3061 datasheet

 

Description

The 2SK3061 is a N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Renesas Electronics. It is commonly used as a switch in power electronics applications, where its low on-resistance and fast switching speed make it well-suited for high-efficiency power conversion systems.

The 2SK3061 has a maximum drain-source voltage of 600V and a maximum drain current of 20A,
making it suitable for high voltage, high current applications.

This product is N-Channel MOS Field Effect Transistor designed for high current switching application.

Features

1. Low on-state resistance :

(1) RDS(on)1= 8.5 mΩMAX. (VGS= 10 V, ID= 35 A)

(2) RDS(on)2= 12 mΩMAX. (VGS= 4.0 V, ID= 35 A)

2. Low Ciss: Ciss= 5200 pF TYP.

3. Built-in gate protection diode

4. Isolated TO-220 package

components

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 70 A

4. Total Power Dissipation: Pd = 2 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

2SK3061 Datasheet PDF Download


2SK3061 pdf

Other data sheets are available within the file: K3061

TIP145 Datasheet PDF – 60V, 10A, PNP Darlington Transistor

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Part Number: TIP145

Function: 60V, 10A, COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR

Package: TO-247 Type

Manufacturer: STMicroelectronics

Image and Pinouts:

TIP145 datasheet

 

Description

The TIP145 is 60V, 10A, Complementary PNP Darlington Transistor.

The TIP140, TIP141 and TIP142 are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration, mounted in TO-218 plastic package.

They are intented for use in power linear and switching applications.

The complementary PNP types are TIP145, TIP146 and TIP147 respectively.

The Darlington complementary transistor configuration consists of two BJTs connected in a way that the emitter of the first transistor is connected to the base of the second transistor, and the collector of the second transistor is connected to the collector of the first transistor. This creates a “Darlington pair” which acts as a single transistor with very high current gain, typically in the range of several thousand.

The Darlington configuration is used in applications where high current gain and high input impedance are required, such as in audio amplifiers, power regulators, and motor control circuits.

Features

1. TIP141, TIP142, TIP145 AND TIP147 ARE STMicroelectronics PREFERRED SALESTYPES

2. COMPLEMENTARY PNP – NPN DEVICES

3. MONOLITHIC DARLINGTON CONFIGURATION

4. INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE

Other data sheets are available within the file:

TIP140, TIP141, TIP142, TIP146

 

TIP145 Datasheet PDF Download


TIP145 pdf