4511GH Datasheet PDF – N And P-Ch Mode Power MOSFET

Part Number: 4511GH

Function: 35V, N And P-Channel Mode Power MOSFET

Package: TO-252-4L Type

Manufacturer: Advanced Power Electronics Corp

Image :

4511GH datasheet

 

Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness

Pinout:

components

Features

1. Simple Drive Requirement

2. Good Thermal Performance

3. Fast Switching Performance

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 35 V

2. Gate to source voltage: VGSS = ± 20 V

3. Total Power Dissipation: Pd =10.4 W

4. Channel temperature: Tch = 150 °C

5. Storage temperature: Tstg = -55 to +150 °C

 

Other data sheets are available within the file: AP4511GH, AP4511GH-A

4511GH Datasheet PDF Download

4511GH pdf

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IPFH6N03LAG Datasheet PDF – 25V, 50A, MOSFET, Transistor

Part Number: IPFH6N03LAG, Marking : H6N03LA

Function: 25V, 50A, MOSFET, OptiMOS 2 Power-Transistor

Package: TO-252-3 Type

Manufacturer: Infineon Technologies

Image and Pinouts:

IPFH6N03LAG datasheet

 

Description

The IPFH6N03LAG is 25V, 50A, Power Transistor.

Features

1. Ideal for high-frequency dc/dc converters

2. Qualified according to JEDEC for target application

3. N-channel, logic level

4. Excellent gate charge x RDS(on)product (FOM)

5. Superior thermal resistance

6. 175 °C operating temperature

7. Pb-free lead plating; RoHS compliant

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 25 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 50 A

4. Power Dissipation: Pd = 71 W (Tc = 25°C)

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

 

Other data sheets are available within the file:

IPSH6N03LAG, IPUH6N03LAG, PDH6N03LAG

 

IPFH6N03LAG Datasheet PDF Download


IPFH6N03LAG pdf