Transistor

STW5NA100 Datasheet PDF – 1000V, 4.6A, N-Ch, MOSFET

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Part Number: STW5NA100

Function: 100V, 4.6A, N-Channel MOSFET

Package: TO-247, ISOWATT218 Type

Manufacturer: STMicroelectronics

Image and Pinouts:

STW5NA100 datasheet

 

Description

THIS IS N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR.

Features

1. TYPICAL RDS(on)= 2.9 Ohm

2. ± 30V GATE TO SOURCE VOLTAGE RATING

3. 100% AVALANCHE TESTED

4. REPETITIVE AVALANCHE DATA AT 100 ‘C

5. GATE CHARGE MINIMISED

6. REDUCED THRESHOLD VOLTAGE SPREAD

Absoulte maximum ratings (Ta = 25°C)

1. Drain-source Voltage (VGS = 0) : VDS = 1000 V

2. Drain- gate Voltage (RGS = 20 kW): VDGR = 1000 V

3. Gate-source Voltage : VGS = ± 30 V

4. Drain Current (continuous) : Id = 4.6 A (Tc = 25°C)

 

Applications:

1. HIGH CURRENT, HIGH SPEED SWITCHING

2. SWITCH MODE POWER SUPPLY (SMPS)

3. DC-AC CONVERTERS FOR WELDING EQUIPMENT AND MOTOR DRIVE

 

Other data sheets are available within the file: H5NA100FI, STH5NA100FI, W5NA100

STW5NA100 Datasheet PDF Download


STW5NA100 pdf

D756A Datasheet PDF – 140V, 50mA, NPN Transistor

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Part Number: D756A

Function: 50mA, 140V, Silicon NPN Transistor

Package: TO-92MOD Type

Manufacturer: Hitachi ( Renesas Electronics )

Images :

D756A datasheet

Description

This is 50mA, 140V, Silicon NPN Epitaxial Transistor.

Features

1.  Low frequency high voltage amplifier

2.  Complementary pair with 2SB715, 2SB716 and 2SB716A

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to base voltage : VCBO = 140 V
2. Collector to emitter voltage : VCEO = 140 V
3. Emitter to base voltage : VEBO = 5 V
4. Collector current : IC = 50 mA
5. Collector power dissipation : PC = 750 mW
6. Junction temperature : Tj = 150 °C
7. Storage temperature: Tstg = -55 to +150 °C

Pinout:

components

Other data sheets are available within the file: 2SD755, 2SD756, 2SD756A, D755, D756

D756A Datasheet PDF Download


D756A pdf

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