Transistor archives - Page 449 of 2673

Features

1. With TO-220F package

2. Complement to type 2SD1830

4. High DC current gain.

5. Large current capacity and wide ASO.

6. Low saturation voltage.

7. DARLINGTON

Absolute maximum ratings :

1. Collector-base voltage : Vcbo = -110 V

2. Collector-emitter voltage : Vceo = -100 V

3. Emitter-base voltage : Vebo = -6 V

4. Collector current : Ic = -8 A

Applications:

1. Suitable for use in control of motor drivers, printer hammer drivers

2. Relay drivers, and constant-voltage regulators.

Other data sheets are available within the file: B1228

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K3561, 2SK3561

Function: N-Channel MOSFET ( Vdss, Vdgr = 500V, Pd = 40W )

Package: TO 220 Type

Manufacturer: Toshiba

Image:

Description

This is 500V, 8A, Silicon N-Channel MOS Type Field Effect Transistor.

Features for K3561 :

1. Low drain-source ON resistance: RDS (ON)= 0.75 Ω(typ.)

2. High forward transfer admittance: | Yfs | = 6.5 S (typ.)

3. Low leakage current: IDSS= 100 μA (VDS= 500 V)

4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

Pinouts:

Absolute Maximum Ratings ( Ta = 25°C )

1. Drain-source voltage: VDSS = 500 V

2. Drain-gate voltage (RGS = 20 kΩ): VDGR = 500 V

3. Gate-source voltage: VGSS = ±30 V

4. Drain current (DC): Id = 8A

5. Drain power dissipation (Tc = 25°C): PD = 40 W

6. Single pulse avalanche energy : EAS = 312 mJ

7. Avalanche current : Iar = 8 A

Applications:

1. Switching Regulator

Transistor

2SB1228 Datasheet PDF – 100V, 8A, PNP Transistor – SavantIC

Description

Features

2SB1228 Datasheet PDF Download

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K3561 Datasheet PDF – N-ch, 500V, 8A, MOSFET, Transistor

Description

K3561 Datasheet

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