2N7000 MOSFET – N-Channel, 200mA, 60V, Transistor ( PDF )

This is 200mA, 60V, N-Channel, Small Signal MOSFET.

2N7000 is a commonly used N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) that is housed in a TO-92 package, making it small and easy to use.

Part Number: 2N7000

Function: 200mA, 60V, N-Ch, MOSFET

Package: TO-92 Type

Manufacturer: ON Semiconductor

Image

2n7000-mosfet

 

What is 2N7000?

The 2N7000 transistor has a maximum voltage rating of 60V and a maximum current rating of 200mA. The transistor has a low gate threshold voltage and a high input impedance, making it suitable for use in low power switching circuits and analog signal processing circuits.

It has a relatively high on-resistance compared to other MOSFETs, which limits its use in high current applications. It also has a limited maximum voltage rating, which limits its use in high voltage applications.

Maximum Ratings:

1. Drain Source Voltage : VDSS = 60 Vdc

2. Drain−Gate Voltage (RGS = 1.0 M): VDGR = 60 Vdc

3. Drain Current
(1) Continuous : ID = 200 mAdc
(2) Pulsed : IDM = 500 mAdc

4. Total Power Dissipation @ TC = 25°C : Pd = 350mW

 

Pinout:

2n7000-pinout

 

Features

1. Suitable for use in low power switching circuits and analog signal processing circuits

1. AEC Qualified

2. PPAP Capable

3. This is a Pb−Free Device

Disadvantages:

1. Relatively high on-resistance compared to other MOSFETs
2. Limited maximum voltage rating
3. Limited use in high current and high voltage applications

1. What is the difference between 2N7000 and 2N7002 transistors?

Answer: 2N7002 is a newer version of 2N7000, with improved on-resistance and lower gate threshold voltage. This makes it more suitable for use in high current and high frequency applications, compared to 2N7000.

2N7000 MOSFET Datasheet

2N7000 pdf


 

Other data sheets are available within the file: 2N7000G

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PZT2907A Datasheet PDF – 60V, 600mA, PNP Transistor

Part Number: PZT2907A

Function: – 60V, – 600mA, PNP Transistor

Package: SOT-223 Type

Manufacturer: ON Semiconductor

Image and Pinouts:

PZT2907A datasheet

 

Description

This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.

Maximum Ratings :

1. Collector-Emitter Voltage : VCEO = – 60 Vdc

2. Collector-Base Voltage : VCBO = – 60 Vdc

3. Emitter-Base Voltage : VEBO = – 5.0 Vdc

4. Collector Current-Continuous : IC = -600 mAdc

Features

1. NPN Complement is PZT2222AT1

2. The SOT-223 package can be soldered using wave or reflow

3. SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering eliminating the possibility of damage to the die.

4. Available in 12 mm tape and reel Use PZT2907AT1 to order the 7 inch/1000 unit reel. Use PZT2907AT3 to order the 13 inch/4000 unit reel.

5. Pb-Free Packages are Available

Other data sheets are available within the file: PZT2907AT1, PZT2907AT1G, PZT2907AT3G, SPZT2907AT1G

PZT2907A Datasheet PDF Download

PZT2907A pdf