Transistor

RJP63F3 Datasheet PDF – 630V, 40A, N-Ch, IGBT, Transistor

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Part Number: RJP63F3, RJP63F3DPP-M0

Function: 630V, 40A, N-Channel IGBT

Package: TO-220FL Type

Manufacturer: Renesas Electronics

Image

RJP63F3 igbt renesas

 

Description

This is 630V, 40A, Silicon N Channel IGBT.

 

Features

1. Trench gate and thin wafer technology (G6H series)

2. Low collector to emitter saturation voltage  VCE(sat)= 1.7 V typ

3. High speed switching tf = 100 ns typ

4. Low leak current  ICES= 1 μA max

5. Isolated package TO-220FL

 

RJP63F3 datasheet pinout

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage : VCES = 630 V

2. Gate to emitter voltage : VGES = ± 30 V

3. Collector current : IC = 40 A

4. Collector peak current : ic(peak) – 200 A

5. Collector dissipation : PC  = 30 W

Applications:

High Speed Power Switching

 

RJP63F3 Datasheet


 

RJP63F3DPP-M0 pdf

 

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2N4401 Datasheet PDF – 40V, 0.6A, NPN Transistor – Philips

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Part Number: 2N4401

Function: NPN switching transistor

Package: TO-92 type

Manufacturer: Philips, NXP Semiconductors.

Image

2N4401 NPN Transistor

Description

This is 40V, 600mA, NPN Transistor.

NPN switching transistor in a TO-92; SOT54 plastic package. PNP complement: 2N4403.

LIMITING VALUES

1. Collector-base voltage open emitter : VCBO = 60 V
2. Collector-emitter voltage open base : VCEO = 40 V
3. Emitter-base voltage open collector : VEBO = 6 V
4. Collector current (DC) : IC = 600 mA
5. Peak collector current : ICM = 800 mA
6. Peak base current : IBM = 200 mA
7. Total power dissipation : Ptot = 630 mW

Pinouts:

2N4401 datasheet pinout

Features

1. High current (max. 600 mA)
2. Low voltage (max. 40 V).

Applications:

1. Industrial and consumer switching applications.

2N4401 Datasheet PDF Download

2N4401 pdf


 

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