Transistor archives - Page 493 of 2673

Features

1. Complement to type 2SA1494)

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 200 V

2. Collector to Emitter Voltage: Vceo = 200 V

3. Emitter to Base Voltage: Vebo = 6 V

4. Collector Current: Ic = 17 A

5. Collector Dissipation : Pc = 200 W ( Tc=25°C )

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Application:

1. Audio and General Purpose

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K4115, 2SK4115

Function: 900V, 7A, N Channel MOSFET

Package: TO-3P Type

Manufacturer: Toshiba

Image

Description

This is 900V, 7A, Silicon N-Channel MOSFET.

1. Low drain-source ON resistance: RDS (ON)= 1.6 Ω(typ.)

2. High forward transfer admittance: ⎪Yfs⎪= 5.0 S (typ.)

3. Low leakage current: IDSS= 100 μA (max) (VDS= 720 V)

4. Enhancement model: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

Pinout

Maximum Ratings (Ta =25°C)

1. Drain-source voltage : VDSS = 900 V

2. Drain-gate voltage (RGS =20 kΩ): VDGR = 900 V

3. Gate-source voltage : VGSS = ±30 V

4. Drain power dissipation (Tc =25°C) : PD = 150 W

5. Single pulse avalanche energy : EAS = 491 mJ

6. Avalanche current : IAR = 7 A

7. Repetitive avalanche energy : EAR = 15 mJ

Applications:

1. Switching Regulator