Transistor

K50H603 Datasheet PDF – 600V, 50A, IGBT, IKW50N60H3

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This is one of the transistor types.

The IGBT is insulated-gate bipolar transistor.

Part Number: K50H603, IKW50N60H3

Function: 600V, 50V, High Speed IGBT

Package: PG-TO247-3 Type

Manufacturer: Infineon ( www.infineon.com )

Image

K50H603 igbt

Features

1. Very low VCEsat
2. Low EMI
3. Very soft,fast recovery anti-parallel diode
4. Maximum junction temperature 175°C
5. Qualified according to JEDEC for target applications
6. Pb-free lead plating; RoHScompliant

Applications:

1. Uninterruptible power supplies
2. Welding converters
3. Converters with high switching frequency

K50H603 Pinout

K50H603 datasheet pdf pinout

K50H603 Datasheet


 

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2SK2315 Datasheet PDF – Vdss=60V, N-Channel MOSFET

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Part Number: 2SK2315

Function: Silicon N Channel MOSFET

Package: UPAK Type

Manufacturer: Renesas Electronics

Image and Pinouts:

2SK2315 datasheet

 

Description

This is 60V, 2A, N-Channel MOSFET.

Features

1. Low on-resistance
2. High speed switching
3. Low drive current
4. 2.5 V gate drive device can be driven from 3 V source.
5. Suitable for DC-DC converter, motor drive, power switch, solenoid drive

Absolute Maximum Ratings

1. Drain to source voltage: VDSS = 60 V
2. Gate to source voltage: VGSS = ±20 V
3. Drain current: ID = 2 A
4. Drain peak current : ID(pulse) = 4 A
5. Body to drain diode reverse drain current : IDR = 2 A
6. Channel dissipation: Pch = 1 W

Other data sheets are available within the file: K2315

2SK2315 Datasheet PDF


2SK2315 pdf

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