Transistor

C4163 Transistor – 400V, 12A, NPN, Equivalent, 2SC4163

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Part Number: C4163

Function: 400V, 12A, NPN Transistor

Package: TO-220F Type

Manufacturer: SavantIC Semiconductor

Image and Pinouts:

C4163 datasheet

 

Description

This is a 400V, 12A, Silicon NPN Power Transistor.

Features

1. With TO-220F package

2. High breakdown voltage.

3. High reliability.

4. Fast switching speed

5. Wide area of safe operation

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 500 V

2. Collector to Emitter Voltage: Vceo = 400 V

3. Emitter to Base Voltage: Vebo = 7 V

4. Collector Current: Ic = 12 A

5. Collector Dissipation : Pc = 2 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications:

1. Switching regulator applications

 

C4163 Datasheet PDF Download


C4163 pdf

Other data sheets are available within the file: 2SC4163

2SK1925 Datasheet PDF – 600V, 8A, N-Ch, MOSFET- Sanyo

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Part Number: 2SK1925

Function: 600V, 8A, N-Channel MOSFET, Transistor

Package: TO-3PB Type

Manufacturer: SANYO (Panasonic)

Image and Pinouts:

2SK1925 datasheet

 

Description

The 2SK1925 is 600V, 8A, N-Channel MOSFET. In an N-channel MOSFET, the source and drain terminals are connected to an N-type semiconductor material, while the gate terminal is insulated from the channel by a thin oxide layer.

Features

1. Low ON resistance

2. Very high-speed switching

3. High-speed diode (trr = 150ns)

Absolute Maximum Ratings at Ta = 25°C

1. Drain-to-Source Voltage : VDSS = 600 V

2. Gate-to-Source Voltage : VGSS = ±30 V

3. Drain Current (DC) : ID = 8 A

4. Drain Current (pulse) : IDP = 32 A

5. Allowable Power Dissipation : PD = 2.5 W

 

Applications

1. Very High-Speed Switching

Other data sheets are available within the file: K1925

2SK1925 Datasheet PDF Download


2SK1925 pdf