Transistor

60J323 Datasheet PDF – 600V, 60A, IGBT, Transistor

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ApplicationPart Number: 60J323

Function: 600V, 60A, N Channel IGBT

Package: TO-3P(LH) Type

Manufacturer: Toshiba

Image and Pinouts:

60J323 datasheet

 

Description

This is 600V, 60A, N-Channel IGBT.

Features

•  Enhancement mode type
•  High speed : tf= 0.16 μs (typ.) (IC= 60A)
•  Low saturation voltage: VCE (sat)= 1.9 V (typ.) (IC= 60A)
•  FRD included between emitter and collector
•  Fourth generation IGBT
•  TO-3P(LH) (Toshiba package name)

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 25 V

3. Collector current : Ic = 60 A

4. Collector dissipation : Pc = 170 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Application:

1. Current Resonance Inverter Switching

Other data sheets are available within the file: GT60J323

 

60J323 Datasheet PDF Download


60J323 pdf

C3021 Datasheet PDF – 17V, 2A, NPN Transistor

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Part Number: C3021

Function: 17V, 2A, RF Power NPN Transistor

Package: T-31E Type

Manufacturer: MITSUBISHI ELECTRIC

Image and Pinouts:

C3021 datasheet

 

Description

This is RF Power NPN Epitaxial Planar Type Transistor.

The C3021 is a silicon NPN epitaxial planar type transistor specifically designed for UHF power amplifier applications.

Features

1. High power gain : Gpe > 7.6 dB @ Vcc = 12.5V, f = 520 Mhz, Pin = 1.2 W

2. Emitter ballasted construction

3. Flange type ceramic package

Absolute maximum ratings

1. Collector to base voltage : Vcbo = 35 V

2. Emitter to base voltage : Vebo = 4 V

3. Collector to emitter voltage : Vceo = 17 V

4. Collector current : Ic = 2A

5. Collector dissipation : Pc = 20 W

Application:

For output stage of 5W power amplifier and drive stage of higher power amplifier in UHF band.

 

Other data sheets are available within the file: 2SC3021

C3021 Datasheet PDF Download


C3021 pdf