W20NM60 Datasheet PDF – N-Ch, 600V, 20A, MOSFET

This is one of the MOSFET types. This is a kind of the transistor

Part Number: STW20NM60, Marking : W20NM60

Function: N-channel 600V, 20A, MOSFET

Package: TO-247AC Type

Manufacturer: STMicroelectronics

See the preview image and the PDF file for more information.

Image

w20nm60-mosfet

Description

This is N-channel 600V, 20A, Power MOSFET.

The MDmesh is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.

 

W20NM60 Pinout

w20nm60-datasheet-pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 20 A

4. Drain power dissipation : PD = 192 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -65 to +150 °C

 

Features

1. High dv/dt and avalanche capabilities

2. 100% avalanche tested

3. Low input capacitance and gate charge

4. Low gate input resistance

 

Ordering Information

w20nm60-ordering-information

Applications:

1. Switching applications

W20NM60 Datasheet


 

Related articles across the web

C3021 Datasheet PDF – 17V, 2A, NPN Transistor

Part Number: C3021

Function: 17V, 2A, RF Power NPN Transistor

Package: T-31E Type

Manufacturer: MITSUBISHI ELECTRIC

Image and Pinouts:

C3021 datasheet

 

Description

This is RF Power NPN Epitaxial Planar Type Transistor.

The C3021 is a silicon NPN epitaxial planar type transistor specifically designed for UHF power amplifier applications.

Features

1. High power gain : Gpe > 7.6 dB @ Vcc = 12.5V, f = 520 Mhz, Pin = 1.2 W

2. Emitter ballasted construction

3. Flange type ceramic package

Absolute maximum ratings

1. Collector to base voltage : Vcbo = 35 V

2. Emitter to base voltage : Vebo = 4 V

3. Collector to emitter voltage : Vceo = 17 V

4. Collector current : Ic = 2A

5. Collector dissipation : Pc = 20 W

Application:

For output stage of 5W power amplifier and drive stage of higher power amplifier in UHF band.

 

Other data sheets are available within the file: 2SC3021

C3021 Datasheet PDF Download


C3021 pdf