MDD3752 Datasheet PDF – 40V, 43A, P-Ch, MOSFET – MagnaChip

Part Number: MDD3752

Function: P-Channel MOSFET, -40V, -43A

Package: TO-252 Type

Manufacturer: MagnaChip

Image:
MDD3752 mosfet

 

Description

This is -40V, -43A, 17mΩ, P-Channel Trench MOSFET.

The MDD3752 uses advanced MagnaChip’s Trench MOSFET Technology to provided high erformance in on state resistance, switching performance and reliability. Low RDS(ON), Low Gate Charge can be offering  superior benefit in the application.

Pinout:

MDD3752 datasheet pinout

 

Features

1.  VDS = -40V
2.  ID = -43A  @VGS = -10V
3.  RDS(ON)
(1) < 17mΩ  @ VGS = -10V
(2) < 25mΩ  @ VGS = -4.5V

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = – 40 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 43 A

4. Drain Power Dissipation: Pd = 50 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. Inverters

2. General purpose

 

MDD3752 Datasheet PDF


 

Related articles across the web

SVF4N65F Datasheet PDF – 4A, 650V, N-Ch, MOSFET – Silan

Part Number: SVF4N65F, SVF4N65T, SVF4N65FM

Function: 4A, 650V, N-CHANNEL MOSFET

Package: TO-220-3L, TO-220F-3L, TO-220F-3L, TO-251-3L Type

Manufacturer: Silan Microelectronics

Image:

SVF4N65F mosfet

Description

The SVF4N65F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.

Pinout:

SVF4N65F datasheet pinout

Features

1.  4A, 650V, RDS(on)(typ)=2.5Ω@VGS=10V

2.  Low gate charge

3.  Low Crss

4.  Fast switching

5.  Improved dv/dt capability

Marking Information :

SVF4N65F order information

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 650 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 4 A

4. Drain Power Dissipation: Pd = 33 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

SVF4N65F Datasheet PDF


 

Related articles across the web