This is one of the IGBT types.
The IGBT is insulated-gate bipolar transistor.
Part Number: 60N60FD1
Function: 600V, 60A, IGBT
Package: TO-3P, TO-247 Type
Manufacturer: Hangzhou Silan Microelectronics ( http: //www.silan.com.cn )
Images :
Description
The 60N60FD1 insulated gate bipolar transistor with field stop (Field Stop) Process production, with low conduction loss and switching loss, the product can be applied to UPS, SMPS and PFC and other fields.
Features
1. 60A, 600V, VCE(sat) (typical value)=2.2V@IC=60A
2. Low conduction loss
3. Fast switching speed
4. High input impedance
Pinout
Absolute maximum ratings ( Tc=25°C )
1. Collector-emitter voltage : VCE = 600 V
2. Gate-emitter voltage : VGE = ±20 V
3. Collector current : 120 A
4. Collector pulse current : ICM = 180 A
5. Power dissipation : PD = 321 W
6. Operating junction temperature range : TJ = -55～+150 °C
7. Storage temperature range : Tstg = -55～+150 °C
Other data sheets are available within the file: SGT60N60FD1PN, SGT60N60FD1P7
60N60FD1 IGBT Datasheet (Transistor)
