Transistor

MJE13003 Datasheet PDF – 400V, 1.5A, 40W, NPN Transistor

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Part Number: MJE13003

Function: POWER TRANSISTOR, 8A, 400V, 40 WATTS

Package: TO-225 Type

Manufacturer: ON Semiconductor

Image and Pinouts:

MJE13003 datasheet

 

Description

These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.

Features

1. Reverse Biased SOA with Inductive Loads @ TC = 100’C
2. Inductive Switching Matrix 0.5 to 1.5 A, 25 and 100’C tc @ 1 A, 100’C is 290 ns (Typ)
3. 700 V Blocking Capability
4. SOA and Switching Applications Information

Maximum Ratings

1. Collector−Emitter Voltage : VCEO(sus) = 400 Vdc
2. Collector−Emitter Voltage : VCEV = 700 Vdc
3. Emitter Base Voltage: Vebo = 9 Vdc

Other data sheets are available within the file: JE13003, JE13003G, MJE13003B, MJE13003G

MJE13003 Datasheet PDF

MJE13003 pdf


 

40N03GP Datasheet PDF – 30V, 40A, Power MOSFET – APEC

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Part Number: AP40N03GP, AP40N03GP-HF-3

Marking : 40N03GP

Function: 30V, 40A, Power MOSFET

Package: TO-220(P) Type

Manufacturer: Advanced Power Electronics Corp ( www.a-powerusa.com )

Image

40N03GP Power MOSFET

Description

This is 30V, 40A, N-channel Enhancement-mode Power MOSFET.

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The 40N03GP is in the TO-220 through-hole package which is used in commercial appplications where a low PCB footprint or an attached heatsink is required. This device is well suited for low voltage applications such as DC/DC converters and high current DC switches.

Pinout:

40N03GP pinout datasheet

 

Features

1. Simple Drive Requirement
2. Low Gate Charge
3. Fast Switching Performance
4. RoHS-compliant, halogen-free

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 30 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 40 A

4. Total Power Dissipation: Pd = 50 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

40N03GP Datasheet


 

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