Part Number: W60N10
Function: 60A, 100V, N-CHANNEL MOSFET
Package: TO-247, TO-218, ISOWATT218 Type
Manufacturer: STMicroelectronics
Image and Pinouts:
Description
This is 60A, 100V, N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR.
Features
1. TYPICAL RDS(on)= 0.02 Ω
2. AVALANCHE RUGGED TECHNOLOGY
3. 100% AVALANCHE TESTED
4. REPETITIVE AVALANCHE DATA AT 100’C
5. LOW GATE CHARGE
6. VERY HIGH CURRENT CAPABILITY
7. 175°C OPERATING TEMPERATURE
8. APPLICATION ORIENTED CHARACTERIZATION
Absoulte maximum ratings
1. Drain-source Voltage (VGS = 0) : VDS = 100 V
2. Drain- gate Voltage (RGS = 20 kW): VDGR = 100 V
3. Gate-source Voltage : VGS = ± 20 V
4. Drain Current (continuous) at Tc = 25 °C : ID = 60 A
5. Drain Current (continuous) at Tc = 100 °C : ID 42 A
6. Drain Current (pulsed) : IDM = 240 A
7. Total Dissipation at Tc = 25 °C : Ptot = 200 W
Applications:
1. HIGH CURRENT, HIGH SPEED SWITCHING
2. SOLENOID AND RELAY DRIVERS
3. REGULATORS
4. DC-DC & DC-AC CONVERTERS
5. MOTOR CONTROL, AUDIO AMPLIFIERS
6. AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
Other data sheets are available within the file: H60N10, STH60N10, STH60N10FI, STW60N10
W60N10 Datasheet PDF Download
