Transistor

IKW40T120 Datasheet PDF – 1200V, 40A, IGBT – Infineon

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Part Number: IKW40T120, K40T120

Function: 1200V, 40A, Discrete IGBT with Anti-Parallel Diode

Package: TO-247 Pin type

Manufacturer: Infineon Technologies

Image :

IKW40T120-datasheet-pinout

Description

This is 1200V, 40A, IGBT. The IGBT is insulated-gate bipolar transistor.

Infineon’s TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

 

Pinout
K40T120-IKW40T120-IGBT

Features

1. Short circuit withstand time – 10 us

2. Designed for :

(1) Frequency Converters
(2) Uninterrupted Power Supply

3. TrenchStop and Fieldstop technology for 1200 V applications offers :

(1) very tight parameter distribution
(2) high ruggedness, temperature stable behavior

4. NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)

5. Low EMI

6. Low Gate Charge

7. Very soft, fast recovery anti-parallel Emitter Controlled HE diode

8. Qualified according to JEDEC1 for target applications

9. Pb-free lead plating; RoHS compliant

 

IKW40T120 PDF Datasheet Download


 

IRFZ24N Datasheet PDF – 55V, 17A, MOSFET, Transistor

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: IRFZ24N

Function: Power MOSFET, 55V, 17A ( Transistor )

Package: D2PAK, TO-262 Type

Manufacturer: International Rectifier

Image and pinouts :

IRFZ24N transistor mosfet

 

Description

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

Pinouts:

IRFZ24N datasheet

Features

1. Fast Switching

2. Static Drain-Source On-Resistance

3. Minimum Lot-to-Lot variations for robust device performance and reliable operation

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 55 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 17 A
4. Drain power dissipation : PD = 45 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C

Other data sheets are available within the file: IRFZ24, IRFZ24NS, IRFZ24L

IRFZ24N Datasheet PDF Download

IRFZ24N pdf

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