Transistor

K1891 Datasheet PDF – N-Ch, 30V, 35A, MOSFET, Transistor

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Part Number: K1891

Function: 30V, 35A, N-Channel MOSFET

Package: SMP-FD Type

Manufacturer: SANYO (Panasonic)

Image and Pinouts:

K1891 datasheet

 

Description

This is 30V, 35A, N-Channel Silicon MOSFET.

Features

1. Low ON resistance.

2. Ultrahigh-speed switching.

3. Low-voltage drive.

4. Surface mount type device making the following possible.

5. Reduction in the number of manufacturing processes for 2SK1891-applied equipment.

6. High density surface mount applications.

7. Small size of 2SK1891-applied equipment.

Test Circuits :

components

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 30 V

2. Gate to source voltage: VGSS = ± 15 V

3. Drain current: ID = 35 A

4. Allowable Power Dissipation: Pd = 70 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. Ultrahigh-Speed Switching

 

K1891 Datasheet PDF Download


K1891 pdf

Other data sheets are available within the file: 2SK1891

K2845 Datasheet – 900V, N-ch MOSFET – Toshiba

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Part Number: K2845, 2SK2845

Function:  Silicon N-Channel MOSFET

Package: TO 251, SC-64 Pin Type

Manufacturer: Toshiba

Image:

K2845 MOSFET Toshiba

Description

This is Silicon N-Channel MOS Type Field Effect Transistor.

Features

1. Low drain-source ON-resistance : RDS (ON) = 8.0 Ω (typ.)
2. High forward transfer admittance : |Yfs| = 0.9 S (typ.)
3. Low leakage current : IDSS = 100 μA (max) (VDS = 720 V)
4.Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Pinout

K2845 pinout 2SK2845

Absolute Maximum Ratings

1. Drain-source voltage: VDSS = 900 V
2. Drain-gate voltage (RGS = 20 kΩ): VDGR = 900 V
3. Gate-source voltage: VGSS = ±30 V
4. Drain power dissipation (Tc = 25°C): PD = 40 W
5. Single-pulse avalanche energy : EAS = 324 mJ

Applications:

Chopper Regulator, DC/DC Converter and Motor Drive

K2845 Datasheet


 

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