Transistor

D4128PL Datasheet PDF – 200V, 5A, NPN Transistor

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Part Number: D4128PL, 3DD4128PL, 3DD4128PL-O-Z-N-C

Function: 200V, 5A, NPN Transistor

Package: TO-126, TO-220 Type

Manufacturer: JILIN SINO-MICROELECTRONICS ( www.hwdz.com.cn )

Image

D4128PL NPN Power Transistor

Description

This is 200V, 5A, Fast-Switching NPN Power Transistor.

 

Features

1. Middling breakdown voltage

2. High current capability

3. High switching speed

4. High reliability

5. RoHS product

 

Pinout

D4128PL datasheet pinout

ABSOLUTE RATINGS (Tc=25°C)

1. Collector- Emitter Voltage（VBE=0）: VCES = 350 V

2. Collector- Emitter Voltage（IB=0）: VCEO = 200 V

3. Emitter-Base Voltage : VEBO = 7 V

4. Collector Current（DC）: IC = 5 A

5. Collector Current（pulse）: ICP = 10 A

6. Base Current（DC）: IB = 2 A

7. Base Current（pulse）: IBP = 4 A

8. Total Dissipation (TO-126) : PC = 40 W

9. Total Dissipation (TO-220) : PC = 75 W

Applications:

1. Energy-saving ligh

2. Electronic ballasts

3. Electronic transformer

4. Commonly power amplifier circuit

 

 

D4128PL Datasheet PDF


 

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SSP7N60B Datasheet PDF – 600V, 7A, N-channel MOSFET

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Part Number: SSP7N60B

Function: 600V, 7A, N-channel MOSFET

Package: TO-220, TO-220F Type

Manufacturer: Fairchild Semiconductor

Image and Pinouts:

SSP7N60B datasheet

 

Description

This is 600V, 7A, N-channel MOSFET.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

Features

1. 7.0A, 600V, RDS(on) = 1.2Ω @VGS = 10 V

2. Low gate charge ( typical 38 nC)

3. Low Crss ( typical 23 pF)

4. Fast switching

5. 100% avalanche tested

6. Improved dv/dt capability

7. TO-220F package isolation = 4.0kV

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 7 A

4. Power Dissipation: Pd = 147 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Other data sheets are available within the file: 7N60B, SSS7N60B

SSP7N60B Datasheet PDF Download


SSP7N60B pdf