Part Number: 2SK3561
Function: N-Channel MOSFET ( Vdss, Vdgr = 500V, Pd = 40W )
Package: TO-220 Type
Manufacturer: Toshiba
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Description
The 2SK3561 is a N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Toshiba.
The K3561 has a maximum drain-source voltage of 500V and a maximum drain current of 8A,
making it suitable for high voltage, high current applications.
Features :
1. Low drain-source ON resistance: RDS (ON)= 0.75 Ω(typ.)
2. High forward transfer admittance: | Yfs | = 6.5 S (typ.)
3. Low leakage current: IDSS= 100 μA (VDS= 500 V)
4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
Pinout
Absolute Maximum Ratings ( Ta = 25°C )
1. Drain-source voltage: VDSS = 500 V
2. Drain-gate voltage (RGS = 20 kΩ): VDGR = 500 V
3. Gate-source voltage: VGSS = ±30 V
4. Drain current (DC): Id = 8A
5. Drain power dissipation (Tc = 25°C): PD = 40 W
Applications:
1. Switching Regulator
2SK3561 Datasheet PDF
