2SC2362 Transistor – 120V, 50mA, NPN ( Datasheet PDF )

Part Number: 2SC2362

Function:  120V, 50mA, NPN Transistor

Package: TO-92 Type

Manufacturer: SANYO (Panasonic)

Image and Pinouts:

2SC2362 datasheet

 

Description

This is NPN Epitaxial Planar Silicon Transistor.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 120 V
2. Collector to Emitter Voltage: Vceo = 100 V
3. Emitter to Base Voltage: Vebo = 5 V
4. Collector Current: Ic = 50 mA
5. Collector Dissipation : Pc = 400 mW
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

components

Applications:

1. High voltag, low-noise amplifier

2SC2362 Datasheet PDF Download


2SC2362 pdf

Other data sheets are available within the file: 2SA1016, 2SA1016K, C2362K, A1016K

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IRF840 Datasheet – 500V, 8A, HEXFET Power MOSFET – IR

Part Number: IRF840

Function: 500V, 8A, HEXFET Power MOSFET

Manufacturer: International Rectifier, ( https://www.infineon.com/ )

Package: TO-220 Type

Image

irf840-mosfet

 

Description

The IRF840 is 500V, 8A, N-CHANNEL POWER MOSFET.

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.  The TO-220 Package is universally preferred for all commerial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughtout the industry.

Pinouts:

IRF840 pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 8 A (Tc = 25°C)

4. Drain Power Dissipation: Pd = 125 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Electrical Characteristics
IRF840 datasheet

IRF840 Datasheet PDF

IRF840 pdf
Other data sheets are available within the file: IRF840AL, IRF840AS, IRF840LCL, IRF840LCS

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