Transistor archives - Page 619 of 2673

Description

The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

Pinout

Features

1. RDS(ON) =9.3Ω@VGS = 10V.
2. Ultra Low gate charge (typical 5.0nC)
3. Low reverse transfer capacitance (CRSS = typical 3.0 pF)
4. Fast switching capability
5. Avalanche energy specified
6. Improved dv/dt capability, high ruggedness

Part Number: CM150DY-24A

Function: Dual IGBT A-Series Module / 150 Amperes / 1200 Volts

Package: Module Type

Manufacturer: MITSUBISHI, Powerex

Image:

Description

This is 150A, 1200V, insulated-gate bipolar transistor.

Powerex IGBTMOD Modules are designed for use in switching applications. Each module
consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse
connected super-fast recovery free-wheel diode. All components and interconnects are isolated
from the heat sinking baseplate, offering simplified system assembly and thermal management.

Features

1. Low Drive Power
2. Low V CE(sat)
3. Discrete Super-Fast Recovery Free-Wheel Diode
4. Isolated Baseplate for Easy Heat Sinking

Pinouts:

Applications:

1. AC Motor Control
2. UPS
3. Battery Powered Supplies

Transistor

1N60 Datasheet PDF – 1.2A, 600V, N-Channel MOSFET

Description

1N60 Datasheet PDF Download

CM150DY-24A Datasheet PDF – 150A, 1200V, Dual IGBT

Description

Features

CM150DY-24A Datasheet Powerex

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