Transistor

FGPF4633 Datasheet PDF – 330V, 300A, IGBT – Fairchild

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Part Number: FGPF4633

Function: 330V, PDP Trench IGBT

Package: TO-220F Type

Manufacturer: Fairchild Semiconductor

Image:

FGPF4633 image

 

Description

This is 330V, 300A, IGBT for PDF.

Using novel trench IGBT technology, Fairchild’s new series of trench IGBTs offer the optimum performance for consumer appliances, PDP TV and lighting applications where low conduction and switching losses are essential.

Pinouts:

FGPF4633 datasheet

Features

1. High Current Capability

2. Low Saturation Voltage: V CE(sat) = 1.55 V @ IC= 70 A

3. High Input Impedance

4. Fast Switching

5. RoHS Compliant

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 330 V

2. Gate to emitter voltage: Vges = ± 30 V

3. Collector current : Ic = 300 A

4. Maximum Power dissipation : Pd = 30.5 W (Tc = 25°C)

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. PDP System

 

FGPF4633 Datasheet PDF Download


FGPF4633 pdf

Other data sheets are available within the file: FGPF4633TU

IXFH26N60Q Datasheet PDF – 600V, 26A, MOSFET – IXYS

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Part Number: IXFH26N60Q

Function: HiPerFET Power MOSFET ( Vdss = 600V, Id25 = 26A, Rds(on) = 0.25 Ohm )

Package: TO-247 Type

Manufacturer: IXYS

Image :

ixfh26n60q-mosfet
Description

This is N-Channel Enhancement Mode Power MOSFET. Avalanche Rated, High dv/dt, Low Qg.

Features

1. Low gate charge
2. International standard packages
3. Epoxy meet UL 94 V-0, flammability classification
4. Low RDS (on) HDMOSTM process
5. Rugged polysilicon gate cell structure
6. Avalanche energy and current rated
7. Fast intrinsic Rectifier

Pinout

ixfh26n60q-datasheet-pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 26 A
4. Drain Power Dissipation: Pd = 350 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C

Advantages :

1. Easy to mount
2. Space savings
3. High power density

IXFH26N60Q Datasheet


 

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