C5296 Transistor – 800V, 8A, NPN, 2SC5296 – Sanyo

This is one of the NPN transistor types. The C5296 is a high voltage, high current NPN transistor commonly used in power switching applications.

Part Number: 2SC5296

Function: 800V, 8A, NPN Transistor

Package: TO-3PML Type

Manufacturer: Sanyo Semicon Device

Image

c5296-npn-transistor

Description

This is 800V, 8A, NPN Triple Diffused Planar Silicon Transistor. It is commonly used in power supply circuits, motor control circuits, and other applications that require high voltage and high current switching.

Features

1. High speed : tf=100ns typ.
2. High breakdown voltage : VCBO=1500V.
3. High reliability (Adoption of HVP process).
4. Adoption of MBIT process.
5. On-chip damper diode

Pinout for C5296

c5296-datasheet-pinout

Absolute Maximum Ratings at Ta = 25°C

1. Collector-to-Base Voltage : VCBO = 1500 V
2. Collector-to-Emitter Voltage : VCEO = 800 V
3. Emitter-to-Base Voltage : VEBO = 6 V
4. Collector Current : IC = 8 A
5. Collector Current (Pulse) : ICP = 16 A
6. Collector Dissipation : PC = 3.0 W
7. Junction Temperature: Tj = 150°C

 

Advantages

1. High voltage and current rating make it suitable for power switching applications

2. High gain allows for low drive current requirements

3. Low saturation voltage reduces power dissipation and improves efficiency

4. TO-3PML package provides easy mounting and heat dissipation

Disadvantages

1. Relatively slow switching speed compared to some other power transistors

2. May require additional protection circuitry to prevent damage from voltage spikes or current surges

3. May not be suitable for very high frequency switching applications

 

Applications

1. Ultrahigh-Definition CRT Display

2. Horizontal Deflection Output

C5296 Transistor Datasheet


 

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B31N20D Datasheet – Vdss=200V, 31A, SMPS MOSFET – IR

Part Number: B31N20D, IRFB31N20D, IRFS31N20D

Function: SMPS MOSFET ( HEXFET Power MOSFET )

Package: TO-220AB, D2Pak, TO-262 Type

Manufacturer: IR ( International Rectifier )

Image

b31n20d-smps-mosfet

Description

This is 200V, 31A, SMPS MOSFET. (Metal-Oxide-Semiconductor Field-Effect Transistor)

Features

1. Low Gate-to-Drain Charge to Reduce Switching Losses

2. Fully Characterized Capacitance Including Effective COSS to Simplify Design

3. Fully Characterized Avalanche Voltage and Current

 

Pinouts:

b31n20d-datasheet-pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 200 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 31 A (Tc = 25°C)

4. Drain Power Dissipation: Pd = 3.1 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. High frequency DC-DC converters

 

Typical SMPS Topologies

Telecom 48V Input Forward Converters

 

 

B31N20D Datasheet PDF


 

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