Transistor

2SK350 Datasheet PDF – 450V, 10A, N-Ch, MOSFET – Hitachi

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Part Number: 2SK350, 2SK349

Function: 450V, 10A, N-Channel MOSFET

Package: TO-3P Pin Type

Manufacturer: Hitachi Semiconductor

Image

2sk350-mosfet-hitachi

Description

The 2SK350 is 450V, 10A, Silicon N-Channel MOSFET.

Features

1. Drain Current –ID=10A@ TC=25℃

2. Drain Source Voltage : VDSS= 450V(Min)

3. Fast Switching Speed

4. Minimum Lot-to-Lot variations for robust device performance and reliable operation

Absolute Maximum Ratings (Ta=25°C )

1. Drain-Source Voltage (VGS=0) : VDSS = 450 V

2. Gate-Source Voltage : VGS = ±20 V

3. Drain Current-continuous@ TC=25°C : ID = 10 A

4. Total Dissipation@TC=25°C : Ptot = 100 W

5. Junction Temperature: Tj = 150°C

6.. Storage Temperature: Tsg = -55 ~ +150°C

 

Pinout

2sk350-datasheet-pinout
Applications:

1. High speed power Switching

 

2SK350 Datasheet PDF

2SK350 pdf


 

 

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G4PC50W Datasheet PDF – 600V, 27A, IGBT, IRG4PC50W – IR

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Part Number: IRG4PC50W, Marking : G4PC50W

Function: 600V, 27A, IGBT

Package: TO-247AC Type

Manufacturer: International Rectifier

Image

G4PC50W igbt

Description

The G4PC50W is 600V, 27A, Insulated Gate Bipolar Transistor.

Features

1. Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications

2. Industry-benchmark switching losses improve efficiency of all power supply topologies

3. 50% reduction of Eoff parameter

4. Low IGBT conduction losses

5. Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability

Pinout

G4PC50W datasheet pinout
Benefits

1. Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz (“hard switched” mode)

2. Of particular benefit to single-ended converters and boost PFC topologies 150W and higher

3. Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >300 kHz)

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 27 A (Tc = 100°C)

4. Maximum Power  Dissipation: Pd = 78 W (Tc = 100°C)

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

G4PC50W Datasheet PDF


 

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