Transistor archives - Page 645 of 2673

This is one of the transistor types.

Part Number: D2012, 2SD2012

Function : Silicon NPN Triple Diffused Type Transistor

Package: TO-220 Type

Manufacturer: Toshiba Semiconductor

Image

Description

1. Low saturation voltage: VCE (sat)= 0.4 V (typ.) (IC= 2A / IB= 0.2A)

2. High power dissipation: PC= 25 W (Tc = 25°C)

Pinout

Absolute Maximum Ratings

1. Collector-base voltage : VCBO = 60 V

2. Collector-emitter voltage : VCEO = 60 V

3. Emitter-base voltage : VEBO = 7 V

4. Collector current : IC = 3 A

5. Base current : IB = 0.5 A

Applications:

1. Audio Frequency Power Amplifier

D2012 Datasheet

This is -30V, -13A, Silicon P Channel MOS Type Field Effect Transistor.

Features

1. Small footprint due to small and thin package

2. Low drain-source ON resistance: RDS (ON) = 5.5 mΩ (typ.)

3. High forward transfer admittance: |Yfs| = 31 S (typ.)

4. Low leakage current: IDSS = −10 μA (max) (VDS = −30 V)

5. Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)

TPC8107 Pinout

Maximum Ratings (Ta = 25°C)

1. Drain-source voltage: VDSS = -30 V

2. Drain-gate voltage (RGS = 20 kΩ): VDGR = -30 V

3. Gate-source voltage: VGSS = ± 20 V

4. Drain power dissipation (t = 10 s) : PD = 1.9 W

Applications:

1. Lithium Ion Battery

2. Notebook PC

3. Portable Equipment