Transistor archives - Page 656 of 2673

Description

The P0603BDG is 30V, 75A, N-Channel Logic Level Enhancement Mode Field Effect Transistor.

Product Summary : V(BR)DSS = 30V, RDS(ON) = 6.5mOhm, ID = 75A

Pinout

ABSOLUTE MAXIMUM RATINGS ( Tc = 25 °C )

0. 1. Drain to source voltage: VDSS = 30 V

1. Gate-Source Voltage : VGS = ±20 V

2. Continuous Drain Current : Id = 75 A

3. Pulsed Drain Current : IDM = 170 A

4. Avalanche Current : IAS = 40 A

5. Avalanche Energy ( L = 0.1mH ) : EAS = 140 mJ

6. Repetitive Avalanche Energy ( L = 0.05mH ) : EAR = 5.6 mJ

7. Power Dissipation: Pd = 60W

Part Number: BU808DFI

Function: 700V, 8A, NPN POWER DARLINGTON TRANSISTOR

Package: ISOWATT 218 Type

Manufacturer: ST Microelectronics

Image

Description

This is 700V, 8A, NPN Darlington Transistor.

The BU808DFI is a NPN transistor in monolithic Darlington configuration. It is manufactured using Multiepitaxial Mesa technology for cost-effective high performance.

Features

1. STMicroelectronics PREFERRED SALESTYPE

2. NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE

3. HIGH VOLTAGE CAPABILITY ( > 1400 V )

4. HIGH DC CURRENT GAIN ( TYP. 150 )

5. U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N))

6. LOW BASE-DRIVE REQUIREMENTS

7. DEDICATED APPLICATION NOTE AN1184

Pinout and Schematic :

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1400 V

2. Collector to Emitter Voltage: Vceo = 700 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 8 A

5. Total Dissipation : Ptot = 52 W ( Tc=25°C )

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -65 ~ +150°C

Applications:

1. HIGH VOLTAGE FAST-SWITCHING

Transistor

P0603BDG Datasheet – 30V, 75A, N-Ch, MOSFET – NIKO-SEM

Description

P0603BDG Datasheet PDF

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BU808DFI Datasheet PDF – 700V, 8A, NPN Transistor – ST

Description

Features

BU808DFI Datasheet PDF

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