Transistor

G4PC4OUD Datasheet PDF – 600V, 40A, UltraFast IGBT

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Part Number: G4PC4OUD, Correct Number :  G4PC40UD, IRG4PC40UD.

Fuction : 600V, 40A, UltraFast IGBT

Package: TO-247AC Type

Manufacturer :  International Rectifier , Infineon Technologies AG

See the preview image and the PDF file for more information.

Image and Pinouts:

G4PC4OUD datasheet

Description

This is 600V, 40A, IGBT.

The IGBT is INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.

Features

1. UltraFast : Optimized for high operating frequencies 8-40 kHz in hard switching, >200  kHz in resonant mode

2. Generation4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

3. IGBT co-packaged with HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

4. Industry standard TO-247AC package

Benefits :

1. Generation -4 IGBT’s offer highest efficiencies available

2. IGBT’s optimized for specific application conditions

3. HEXFRED diodes optimized for performance with IGBT’s . Minimized recovery characteristics require less/no snubbing

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 40 A (Tc = 25°C)

4. Maximum Power Dissipation : Pc = 160 W (Tc = 25°C)

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

G4PC4OUD Datasheet PDF Download

G4PC40UD pdf

Other data sheets are available within the file: IRG4PC4OUD

2SA1290 Datasheet PDF – 60V, 7A, PNP Power Transistor

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Part Number: 2SA1290

Function: -60V, -7A, Silicon PNP Power Transistor / Complement to type 2SC3254

Package: TO-220 Type

Manufacturer: SavantIC Semiconductor

Image and Pinouts:

2SA1290 datasheet

 

Description

This is -80V, -7A, Silicon PNP Power Transistor.

1. With TO-220 package
2. Short switching time
3. Low collector saturation voltage
4. Complement to type 2SC3254

 

Features

1. Low saturation voltage.
2. Excellent current dependence of hFE.
3. Short switching time

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 80 V
2. Collector to Emitter Voltage: Vceo = – 60 V
3. Emitter to Base Voltage: Vebo = – 5 V
4. Collector Current: Ic = -7 A
5. Total Dissipation : Pc = 35 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications

1. Various inductance lamp drivers for electrical equipment.
2. Inverters, converters (strobo, flash, fluorescent lamp lighting circuit).
3. Power amp (high power car stereo, motor controller).
4. High-speed switching (switching regulator, driver).

Other data sheets are available within the file: A1290

2SA1290 Datasheet PDF Download


2SA1290 pdf