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Features

1. High Speed Switching
2. Low on-resistance
3. No secondary breakdown
4. Low driving power
5. High voltage

Applications:

1. Switching regulators
2. UPS
3. DC-DC converters
4. General purpose powe amplifer

Pinouts:

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V
2. Drain current: ID = 6 A
3. Drain peak current : ID(pulse) = 24 A
4. Body to drain diode reverse drain current : IDR = 6 A
5. Gate to source voltage: VGSS = ± 20 V
6. Power dissipation : Pd = 80 W
7. Channel temperature: Tch = 150 °C
8. Storage temperature: Tstg = -55 ~ +150 °C

Other data sheets are available within the file: K950

Part Number: SVF10N65F

Function: 10A, 650V, N-CHANNEL MOSFET

Package: TO-220F-3L Type

Manufacturer: HANGZHOU SILAN MICROELECTRONICS ( http://www.silan.com.cn )

Image

SVF10N65F 650V MOSFET

Description

The SVF10N65F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.

Features

1. 10A, 650V, RDS(on)(typ)=0.80Ω@VGS=10V
2. Low gate charge
3. Low Crss
4. Fast switching
5. Improved dv/dt capability

Pinouts:
SVF10N65F pinout
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)

1. Drain-Source Voltage : VDS = 650 V
2. Gate-Source Voltage : VGS = ±30 V
3. Drain Current Pulsed : ID = 10 A
4. Pulsed Avalanche Energy : EAS = 608 mJ

Transistor

2SK950 Datasheet PDF – 500V, 6A, N-Ch, MOSFET – Fuji

Description

Features

2SK950 Datasheet PDF Download

SVF10N65F Datasheet PDF – 650V, 10A, N-Ch, MOSFET

SVF10N65F Datasheet PDF Download

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