2SK2973 Datasheet PDF – 17V, RF Power MOSFET – Mitsubishi

Part Number: 2SK2973

Function: 17V, RF POWER MOSFET

Package: SOT-89 Type

Manufacturer: MITSUBISHI ELECTRIC

Image and Pinouts:

2SK2973 datasheet

 

Description

The 2SK2973 is a MOSFET type transistor specifically designed for VHF/UHF power amplifiers applications.

Features

1. High power gain : Gpe>13dB, @Vdd=9.6V,f=450MHz,Pin=17dBm

2. High efficiency : 55% typ.

3. Source case type SOT-89 package(connected internally to source)

Absolute Maximum Ratings

1. Drain to source voltage : Vdss = 17 V

2. Gate to source voltage : Vgss = ± 10 V

3. Channel dissipation (Tc=25°C) : 1.5 W

Application:

1. For drive stage and output stage of power amplifiers in VHF/UHF band portable radio sets.

Other data sheets are available within the file: K2973

2SK2973 Datasheet PDF Download


2SK2973 pdf

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2SB1642 Transistor – 60V, 4A, PNP ( Datasheet PDF )

Part Number: 2SB1642

Function: – 60V, – 4A, PNP Transistor

Package: TO-220F Type

Manufacturer: Quanzhou Jinmei Electronic

Image and Pinouts:

2SB1642 datasheet

 

Description

The 2SB1642 is Silicon PNP epitaxial planar type transistor. The operation of a PNP transistor is based on the biasing of its three layers: the emitter, base, and collector. The emitter is connected to the positive power supply, the base is the control terminal, and the collector is connected to the load or circuit.

When a small current flows into the base terminal, it controls a larger current flowing between the emitter and collector. The transistor amplifies the input signal and can be used to switch larger currents on and off in various electronic circuits.

Silicon PNP transistors offer advantages such as high gain, low noise, and good thermal stability. They are widely used in many applications, including audio amplifiers, power supplies, voltage regulators, and digital logic circuits.

Features

1. With TO-220F package

2. Low collector saturation voltage :  Vce(sat)= -1.5V(Max) at Ic=-2.5A, Ib=-0.25A

3. Collector power dissipation : Pc=25W (TC=25°C)

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 60 V
2. Collector to Emitter Voltage: Vceo = – 60 V
3. Emitter to Base Voltage: Vebo = – 7 V
4. Collector Current: Ic = – 4 A
5. Collector Dissipation : Pc = 2 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

Applications:

1. For low-voltage switching

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2SB1642 Datasheet PDF Download

2SB1642 pdf


Other data sheets are available within the file: B1642

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