Transistor

FDN335N Datasheet – 20V, 1.7A, N-Ch, MOSFET ( PDF )

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Part Number: FDN335N, Marking : 335

Function: N-Channel 2.5V Specified PowerTrench MOSFET

Package: SuperSOT-3 Type

Manufacturer: Fairchild Semiconductor

Image and Pinouts:

FDN335N datasheet

 

Description

This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for
superior switching performance.

Features

• 1.7 A, 20 V. Rds(on)= 0.07 Ω @ Vgs= 4.5 V Rds(on)= 0.100 Ω @ Vgs= 2.5 V.

• Low gate charge (3.5nC typical).

• High performance trench technology for extremely low Rds(on)

• High power and current handling capability.

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 20 V

2. Gate to source voltage: VGSS = ± 8 V

3. Drain current: ID = 1.7 A

4. Power Dissipation: Pd = 0.5 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Other data sheets are available within the file: FDN335

 

FDN335N Datasheet PDF Download


FDN335N pdf 

C5353 Datasheet PDF – 800V, 3A, NPN Transistor, 2SC5353

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Part Number: C5353,  2SC5353

Function: 800V, 3A, NPN Transistor

Package: TO-220 Type

Manufacturer: Toshiba

Image:

C5353 Image

Description

This is Silicon NPN Triple Diffused Type Transistor (PCT process).

Features

1.  Excellent switching times: tr= 0.7 μs (max), tf= 0.5 μs (max)
2.  High collectors breakdown voltage: VCEO= 800 V

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 900 V
2. Collector to Emitter Voltage: Vceo = 800 V
3. Emitter to Base Voltage: Vebo = 7 V
4. Collector Current: Ic = 3A
5. Total Dissipation : Pc = 2.0 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

Pinouts:

C5353 Pinout

Applications

1. Switching Regulator and High Voltage Switching
2. High-Speed DC-DC Converter

C5353 Datasheet

C5353 Datasheet


 

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