K13A60D PDF Datasheet – 600V, 13A, MOSFET, TK13A60D

This post explains for the MOSFET.

The Part Number is K13A60D, TK13A60D.

The function of this semiconductor is 600V, 13A, N-Channel MOSFET.

The package is TO-220 Type

Manufacturer: Toshiba Semiconductor

Images:

K13A60D Datasheet

 

Description

K13A60D is 600V, 13A, Silicon N-Channel MOS Type Field Effect Transistor.

Features

1. Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.)

2. High forward transfer admittance: |Yfs| = 6.5 S (typ.)

3. Low leakage current: IDSS = 10 μA (VDS = 600 V)

4. Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) […]

K13A60D pdf pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 13 A

4. Drain Power Dissipation: Pd = 50 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. Switching Regulator

K13A60D PDF Datasheet

C2785 PDF Datasheet – 2SC2785, 50V, 0.1A, NPN Transistor

This post explains for the NPN transistor.

The Part Number is C2785, 2SC2785.

The function of this semiconductor is NPN Silicon Transistor.

Manufacturer: NEC

Image

C2785 datasheet transistor

Description

This is 50V, 100mA, NPN Silicon Transistor.

The C2785 is designed for use in driver stage of AF amplifier and low speed switching.

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Features

1. High Voltage: Vceo = 50 V min.

2. Excellent hFE Linearity : 0.92 typ

3. Complementary to the NEC 2SA1175 PNP Transistor.

1 page
C2785 pinout pdf

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 60 V

2. Collector to Emitter Voltage: Vceo = 50 V

3. Emitter to Base Voltage: Vebo = 5.0 V

4. Collector Current: Ic = 100 mA

5. Total Dissipation : Pc = 250mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

2 page
2SC2785 transistor

C2785 PDF Datasheet