Transistor

IRFB9N60A Datasheet PDF – 600V, 9.2A, HEXFET MOSFET

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Part Number: IRFB9N60A

Function: HEXFET Power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 9.2A

Package: TO-220AB Type

Manufacturer: International Rectifier, ( https://www.infineon.com/ )

Image and Pinouts:

IRFB9N60A datasheet

 

Description

This is 600V, 9.2A, HEXFET Power MOSFET.

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on resistance and cost-effectiveness.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

 

Features

1. Dynamic dv/dt Rating
2. Repetitive Avalanche Rated
3. Fast Switching
4. Ease of Paraleling
5. Simple Drive Requirements

Other data sheets are available within the file: FB-9N60A, FB9N60A

IRFB9N60A Datasheet PDF Download


IRFB9N60A pdf

C5801 Transistor – 5.5V, 100mA, NPN, Equivalent ( Datasheet )

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Part Number: C5801

Function: 5.5V, 100mA, NPN SILICON RF TRANSISTOR

Package: Lead-less minimold 3-pin Type

Manufacturer: California Eastern Laboratories.

Image and Pinouts:

C5801 datasheet

 

Description

THIS IS 5.5V, 100mA, NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE.

Features

1. Low phase distortion, low voltage operation

2. Ideal for OSC applications

3. 3-pin lead-less minimold package

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 9 V

2. Collector to Emitter Voltage: Vceo = 5.5 V

3. Emitter to Base Voltage: Vebo = 1.5 V

4. Collector Current: Ic = 100 mA

5. Total Dissipation : Ptot = 140 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -65 ~ +150°C

 

Other data sheets are available within the file:

2SC5801, 2SC5801-A, 2SC5801-T3-A, 851M13, NE851M13

 

C5801 Datasheet PDF Download

C5801 pdf