Transistor

GT60N321 Datasheet – 1000V, 60A, IGBT – Toshiba

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Part Number: GT60N321

Function: The 4th Generation IGBT, 1000V, 60A

Pakcage : TO-3P(LH) Type

Description

High Power Switching Applications

Manufacturer: Toshiba Semiconductor

Image: GT60N321

Description

This is 1000V, 60A, Fourth Generation IGBT.

Features

•  FRD included between emitter and collector
•  Enhancement mode type
•  High speed  IGBT : tf= 0.25 μs (typ.) (IC= 60 A), FRD : trr= 0.8 μs (typ.) (di/dt = −20 A/μs)
•  Low saturation voltage: VCE (sat)= 2.3 V (typ.) (IC= 60 A)

GT60N321 Datasheet

GT60N321 Datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Collector-Emitter Voltage : VCES = 1000 V

2. Collector Current : IC = 60 A

3. Collector Power Dissipation (Tc = 25°C) : Pc = 170 W

4. Channel temperature: Tch = 150 °C

5. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. High Power Switching


 

K2608 Datasheet PDF – 900V, 3A, N-Ch, MOSFET, 2SK2608

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Part Number: K2608, 2SK2608

Function : 900V, 3A, Silicon N Channel MOSFET

Package: TO-220AB Type

Manufacturer: Toshiba

Image

K2608 mosfet

Description

This is 900V, 3A, Silicon N Channel MOS Type Field Effect Transistor.

 

Features

1. Low drain−source ON resistance  : RDS (ON)= 3.73 Ω(typ.)

2. High forward transfer admittance  : |Yfs|=2.6 S (typ.)

3. Low leakage current  : IDSS= 100 μA (max) (VDS= 720 V)

4. Enhancement mode  : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

 

Pinout

K2608 datasheet pinout

Absolute Maximum Ratings

1. Drain−source voltage : VDSS = 900 V

2. Drain−gate voltage (RGS= 20 kΩ): VDGR = 900 V

3. Gate−source voltage : VGSS = ±30 V

4. Drain power dissipation (Tc = 25°C) : PD = 100 W

5. Single pulse avalanche energy : EAS = 295 mJ

6. Drain current : Id = 3 A

Applications:

1. Switching Regulator

K2608 Datasheet PDF


 

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