Transistor

IPB65R125C7 Datasheet PDF – 650V, 18A, MOSFET

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Part Number: IPB65R125C7

Function: 650V, 18A, CoolMOS C7 Power Transistor

Package: D2PAK Type

Manufacturer: Infineon Technologies

Image and Pinouts:

IPB65R125C7 datasheet

 

Description

This is 650V, CoolMOS C7 Power Transistor.

CoolMOS is a revolutionary technology for high voltage power MOSFET, designed according to the superjuntion principle and pioneered by infineon Technologies.

 

Summary of

Features

1. 650V voltage
2. Revolutionary Best-in-Class RDS(on)/package
3. Reduced energy stored in output capacitance (Eoss)
4. Lower gate charge Qg
5. Space saving through use of smaller packages or reduction of parts

 

Applications:

1. PFC stages and hard switching PWM stages for e.g. Computing, Server, Telecom,

UPS and Solar.

Other data sheets are available within the file: 65C7125, IPB65R125C7ATMA1

 

IPB65R125C7 Datasheet PDF Download

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GQ90N33 Datasheet PDF – 330V, 90A, IGBT, Transistor

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Part Number: GQ90N33

Function: 330V, 90A, IGBT, Trench Gate, High Speed

Package: TO-3P Type, TO-263AA Type

Manufacturer: IXYS CORPORATION

Image and Pinouts:

GQ90N33 datasheet

 

Description

This is 330V, High Speed IGBT. The IGBT is insulated-gate bipolar transistor.

Features

• Low V CE(sat) – for minimum On-State Conduction Losses

• Fast Switching

Maximum Ratings :

1. VCES TJ = 25°C to 150°C 330 V
2. VGES Continuous ±20 V
3. VGEM Transient ±30 V
4. IC25 TC= 25°C (Chip Capability) 90 A
5. IC(RMS) Lead Current Limit 75 A
6. IC110 TC = 110°C 38 A
7. ICP TC < 150°C, tp < 10μs 60 A
8. ICP TC < 150°C, tp < 10μs, Duty cycle < 1% 360 A
9. PC TC = 25°C 200 W
10. TJ -55 … +150 °C
11. TJM 150 °C
12. Tstg -55 … +150 °C
13. TL Maximum Lead Temperature for Soldering 300 °C
14. TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C

Other data sheets are available within the file:

GA90N33TC, GQ90N33TC, GQ90N33TCD1, IXGA90N33TC,

IXGQ90N33TC, IXGQ90N33TCD1

 

GQ90N33 Datasheet PDF Download


GQ90N33 pdf

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