Transistor

C5411 PDF Transistor – NPN, Equivalent, 2SC5411 ( Datasheet )

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Part Number: C5411, 2SC5411

Function: 600V, 14A, Silicon NPN Transistor

Package: TO-220 Type

Manufacturer: Toshiba Semiconductor

Images:

C5411 pdf pinout

 

Description

C5411 is 600V, 14A, NPN Transistor. 

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Features

1. High Voltage : VCBO = 1500 V

2. Low Saturation Voltage : VCE (sat) = 3 V (Max.)

3. High Speed : tf = 0.15 μs (Typ.)

4. Collector Metal (Fin) is Fully Covered with Mold Resin.

 

3 page
C5411 transistor datasheet

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1500 V

2. Collector to Emitter Voltage: Vceo = 600 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 14 A

5. Collector Dissipation : Pc = 60 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications:

1. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION

2. HIGH SPEED SWITCHING

C5411 PDF Datasheet

9T16GH Datasheet – 20V, 25A, Power MOSFET, AP9T16GH

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Part Number: 9T16GH, AP9T16GH

Function: 20V, 25A, N-Channel Enhacement Mode Power MOSFET

Package: TO-252(H), TO-251(J)

Manufacturer: Advanced Power Electronics

Images:

9T16GH datasheet pdf

 

Description

9T16GH is 20V, 25A, Power MOSFET.

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

Features

1. Low Gate Charge

2. Capable of 2.5V gate drive

3. Single Drive Requirement

4. RoHS Compliant

 

9T16GH pinout mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 20 V

2. Gate to source voltage: VGSS = ± 16 V

3. Drain current: ID = 25 A

4. Total Power Dissipation: Pd = 25 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

9T16GH Datasheet