Transistor

D2131 Transistor – 70V, 5A, NPN, Equivalent, 2SD2131 ( PDF )

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Part Number: 2SD2131

Function: 70V, 5A, NPN Transistor

Package: TO-220 Type

Manufacturer: Toshiba

Images:D2131 pdf pinout

Description

D2131 is Silicon NPN Triple Diffused Type (Darlington) Transistor.

 

Features

1. High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A)

2. Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)

3. Zener diode included between collector and base.

4. Unclamped inductive load energy: E = 150 mJ (min)

 

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 60 ± 10 V

2. Collector to Emitter Voltage: Vceo = 60 ± 10 V

3. Emitter to Base Voltage: Vebo = 7 V

4. Collector Current: Ic = 5 A

5. Collector Dissipation : Pc = 2 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications:

1. High-Power Switching

2. Hammer Drive, Pulse Motor Drive

D2131 PDF Datasheet

D2131 pdf

A965 PDF – 120V, 800mA, PNP Transistor – 2SA965

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This post explains for the transistor 2SA965.

The Part Number is A965.

The function of this semiconductor is PNP Transistor.

The package is TO-92MOD Type

Manufacturer: Toshiba Semiconductor

Preview images :A965 pinout pdf

Description

A965 is 120V, 800mA, PNP Transistor. Complementary to 2SC2235.

PNP transistors comprise the following key components:

PNP transistors control the flow of a large current (collector current) between the emitter and collector using a small current applied to the base (base current). When a base current flows, the PNP transistor permits the flow of electrons from the emitter to the collector, resulting in an increase in collector current. Reducing the base current reduces the collector current. Consequently, PNP transistors are valuable electronic components for controlling large output currents with small input currents.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 120 V

2. Collector to Emitter Voltage: Vceo = – 120 V

3. Emitter to Base Voltage: Vebo = – 5 V

4. Collector Current: Ic = – 800 mA

5. Collector Dissipation : Pc = 900 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

A965 datasheet transistor

Applications:

1. Silicon PNP Transistor, Power Amplifier

2. Driver Stage Amplifier

A965 PDF Datasheet