Part Number: CS2N60F

Function: 600V, 2A, N-Channel Power MOSFET / VDMOSFET

Package: TO-220F type

Manufacturer: HUAJING MICROELECTRONICS

Pinouts

Description

This is 600V, 2A, Silicon N-channel MOSFET.

The silicon N-channel Enhanced VDMOSFET s, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance  the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard.

Features

1. Fast Switching

2. Low ON Resistance( Rdson≤4.5Ω )

3. LowGate Charge  ( Typical Data : 8.5nC )

4. Low Reversetransfer capacitances ( Typical : 5.4pF )

5.100% Single Pulse avalanche energy Test

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 2 A

4. Drain Power Dissipation: Pd = 24 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. Power switch circuit of adaptor and charger

CS2N60F Datasheet PDF Download

 

Other data sheets are available within the file: CS2N60FA9H