Transistor

K06N60 Datasheet – 600V, Fast IGBT – Infineon ( PDF )

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Part Number: K06N60

Function: 600V, IGBT

Package: TO-220AB, FullPak Type

Manufacturer: Infineon

Image and Pinout:
K06N60 Datasheet

Description

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode

Features

1. 75% lower Eoff compared to previous generation combined with low conduction losses
2. Short circuit withstand time – 10 us
3. Designed for: Motor controls, Inverter
4. NPT-Technology for 600V applications offers:
– very tight parameter distribution
– high ruggedness, temperature stable behaviour
– parallel switching capability
5. Very soft, fast recovery anti-parallel Emitter Controlled Diode
6. Isolated TO-220, 2.5kV, 60s
7. Pb-free lead plating; RoHS compliant
8. Qualified according to JEDEC

K06N60 Marking

Other data sheets are available within the file: SKP06N60, SKA06N60

K06N60 Datasheet


 

2SK10A50D Datasheet PDF – 500V, 10A, MOSFET, TK10A50D

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Part Number: 2SK10A50D, Corrector Part Number: TK10A50D

Function:  500V, 10A, N-Channel MOSFET

Pacakge : TO-220 Type

Manufacturer: Toshiba

Images :
2SK10A50D datasheet

Description

This is 500V, 10A, Silicon N Channel MOS Field Effect Transistor.

Features

1. Low drain-source ON-resistance: RDS (ON)= 0.62 Ω(typ.)
2. High forward transfer admittance: ⎪Yfs⎪= 5.0 S (typ.)
3. Low leakage current : IDSS= 10 μA (max) (VDS= 500 V)
4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage: VDSS = 500 V
2. Gate-source voltage: VGSS = ±30 V
3. Drain current : Id = 10 A
4. Drain power dissipation (Tc = 25°C): PD = 45 W
5. Single pulse avalanche energy : EAS = 264 mJ
6. Avalanche current : IAR = 10 A
7. Repetitive avalanche energy : EAR = 4.5 mJ

Applications

1. Switching Regulator

Other data sheets are available within the file: K10A50D

2SK10A50D Datasheet PDF Download


2SK10A50D pdf